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hexfet ? power mosfet d1 d1 d2 d2 g1s2 g2 s1 top view 8 12 3 4 5 6 7
features advanced planar technology ultra low on-resistance logic level gate drive dual n channel mosfet surface mount available in tape & reel 175c operating temperature automotive [q101] qualified * lead-free , rohs compliant specifically designed for automotive applications, thesehexfet ? power mosfet's in a dual so-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. additional features of these automotive qualified hexfet power mosfet's are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these benefits combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. the efficient so-8 package provides enhanced thermal characteristics and dual mosfet die capability making it ideal in a variety of power applications. this dual, surface mount so- 8 can dramatically reduce board space and is also available in tape & reel. absolute maximum ratingsstresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specificatio ns is not implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermalresistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. gds gate drain source so-8 hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v (br)dss 55v r ds(on) typ. 0.043 max. 0.050 i d 5.1a parameter max. units v ds drain-source voltage 55 v i d @ t a = 25c continuous drain current, v gs @ 10v 5.1 i d @ t a = 70c continuous drain current, v gs @ 10v 4.2 i dm pulsed drain current 42 p d @t a = 25c power dissipation 2.4 p d @t a = 70c power dissipation 1.7 linear derating factor 16 mw/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 140 mj i ar avalanche current 5.1 a e ar repetitive avalanche energy see fig. 16,17,14a, 14b mj t j operating junction and t stg storage temperature range thermal resistance parameter max. units r ja junction-to-ambient 62.5 c/w w a c -55 to + 175
automotive grade

form quantity tube 95 auirf7341q tape and reel 4000 AUIRF7341QTR base part number package type standard pack orderable part number auirf7341q so-8 downloaded from: http:///

repetitive rating; pulse width limited by max. junction temperature. v dd = 25v, starting t j = 25c, l = 10.7mh, r g = 25 , i as = 5.2a. pulse width 300 s duty cycle surface mounted on fr-4 board, 10sec s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 55 CCC CCC v v (br)dss / t j breakdown voltage temp. coefficient CCC 0.052 CCC v/c CCC 0.043 0.050 CCC 0.056 0.065 v gs(th) gate threshold voltage 1.0 CCC 3.0 v gfs forward transconductance 10.4 CCC CCC s i dss drain-to-source leakage current CCC CCC 2.0 CCC CCC 25 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge CCC 29 44 q gs gate-to-source charge CCC 2.9 4.4 q gd gate-to-drain ("miller") charge CCC 7.3 11 t d(on) turn-on delay time CCC 9.2 CCC t r rise time CCC 7.7 CCC t d(off) turn-off delay time CCC 31 CCC t f fall time CCC 12.5 CCC c iss input capacitance CCC 780 CCC c oss output capacitance CCC 190 CCC c rss reverse transfer capacitance CCC 66 CCC diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.2 v t rr reverse recovery time CCC 51 77 ns t j = 25c,i f = 2.6a q rr reverse recovery charge CCC 76 114 nc di/dt = 100a/ s v ds = v gs , i d = 250 a conditions v ds = 10v, i d = 5.2a i d = 5.2a v gs = 20v r ds(on) static drain-to-source on-resistance v gs = 4.5v, i d = 4.42a conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 5.1a t j = 25c, i s = 2.6a, v gs = 0v integral reverse p-n junction diode. conditions mosfet symbol showing the a pf ns nc v ds = 25v ? = 1.0mhz na a v ds = 44v, v gs = 0v v ds = 44v, v gs = 0v, t j = 150c v gs = 10v v gs = -20v v ds = 44v v dd = 28v i d = 1.0a r g = 6.0 v gs = 10v v gs = 0v 42 CCC CCC CCC CCC 2.4 downloaded from: http:///

fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 2.0 3.0 4.0 5.0 6.0 7.0 v = 25v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 5.2a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.7v 20 s pulse width tj = 25c vgs top 15.0v 10.0v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 2.7v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 20 s pulse width tj = 175c 2.7v vgs top 15.0v 10.0v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 2.7v downloaded from: http:///

fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 10 20 30 40 50 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 5.2a v = 11v ds v = 27v ds v = 44v ds 0.1 1 10 100 0.2 0.5 0.8 1.1 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 175 c j t = 25 c j 0.1 1 10 100 1000 0.1 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 v ds , drain-to-source voltage (v) 0 200 400 600 800 1000 1200 1400 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd downloaded from: http:///

fig 10. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10b. switching time waveforms fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 175 0.0 1.0 2.0 3.0 4.0 5.0 6.0 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
1 0.1 %
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fig 12. typical on-resistance vs. drain current fig 11. typical on-resistance vs. gate voltage fig 13b. gate charge test circuit d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13a. basic gate charge waveform fig 15. maximum avalanche energy vs. drain current 25 50 75 100 125 150 175 0 80 160 240 320 400 starting tj, junction temperature ( c) e , single pulse avalanche energy (mj) as i d top bottom 2.1a 4.3a 5.1a 0 1 02 03 04 05 06 0 i d , drain current ( a ) 0.020 0.040 0.060 0.080 0.100 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) vgs = 4.5v vgs = 10v 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 v gs, gate -to -source voltage (v) 0.020 0.030 0.040 0.050 0.060 0.070 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) i d = 7.1a () () fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v q g q gs q gd v g charge downloaded from: http:///

fig 16. typical avalanche current vs.pulsewidth fig 17. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 16, 17:(for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type.2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 14a, 14b. 4. p d (ave) = average power dissipation per single avalanche pulse.5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 tav (sec) 0.001 0.01 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming tj = 25c due to avalanche losses 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 10% duty cycle i d = 5.1a downloaded from: http:///

so-8 package outlinedimensions are shown in millimeters (inches) so-8 part marking e1 de y b aa1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070]

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330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in millimeters (inches)

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qualification information ? so-8 msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5(+/-1125v ) ??? (per aec-q101-005) moisture sensitivity level rohs compliant yes esd machine model class m2(+/-200v ) ??? (per aec-q101-002) human body model class h1a(+/-500v ) ??? (per aec-q101-001) ? qualification standards can be found at international rectifiers web site: http//www.irf.com/ ?? exceptions (if any) to aec-q101 requirements are noted in the qualification report. ??? highest passing voltage downloaded from: http:///

unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are so ld subject to irs terms and conditions of sale supplied at the time of order acknowledgment.ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with irs s tandard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. exc ept where mandated by government requirements, testing of all parameters of each product is not necessarily performed.ir assumes no liability for applications assistance or customer product design. customers are responsible for their products an d applications using ir components. to minimize the risks with customer products and applications, customers should provideadequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or serv ice voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business p ractice. ir is not responsible or liable for any such statements.ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the b ody, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, aff iliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim al leges that ir was negligent regarding the design or manufacture of the product. ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or enhanced plastic. only products designated by ir as military-grade meet m ilitary specifications. buyers acknowledge and agree that any such use of ir products which ir has not designated as military-grade issolely at the buyers risk, and that they are solely responsible for compliance with all legal and regulatory requirements in c onnection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation au. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements for technical support, please contact irs technical assistance center http://www.irf.com/technical-info/ world headquarters: 101n.sepulveda blvd, el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:///

date comments ? added "logic level gate drive" bullet in the features section on page 1 ? updated data sheet with new ir corporate template revision history 3/10/2014 downloaded from: http:///

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